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      Maximum Ratings (at TA=25°C unless otherwise noted) Parameter Symbol Unit Repetitive peak reverse voltage Continuous reverse voltage RMS Voltage MAX. Forward surge current MAX. Forward voltage at IF=1.0A MAX. Forward surge current, 8.3ms single half sine-wave superimposed on rated load (JEDEC method) MAX. Reverse recovery time, (Note 1) V R=VRR TJ=25°C MAX. Reverse current Operating junction temperature Storage temperature range Reverse V oltage: 50 to 600 Volts Forward Current: 1.0 Amp RoHS Device Dimensions in inches and (millimeter) Features -Ideal for surface mount applications. -Easy pick and place. -Plastic package has Underwriters Lab. flammability classification 94V-0. -Super fast recovery time for high ef ficient. -Built-in strain relief. -Low forward voltage drop. Mechanical data -Case: Molded plastic, JEDEC SOD-123/Mini SMA. -T erminals: Solderable per MIL-STD-750, method 2026. -Polarity: Indicated by cathode band. -W eight: 0.018 grams approx. CEFM101-G Thru. CEFM105-G Page 1 QW-BE007 SMD Efficient Fast Recovery Rectifiers REV:C Comchip Technology CO., LTD. SOD-123 / Mini SMA 0.154(3.9) 0.138(3.5) 0.012(0.3) Typ. 0.075(1.9) 0.060(1.5) 0.067(1.7) 0.051(1.3) 0.028(0.7) Typ. 0.028(0.7) Typ. VRRM VR VRMS IO VF IFSM Trr IR TJ TSTG CJ CEFM 101-G CEFM 102-G CEFM 103-G CEFM 104-G CEFM 105-G 50 50 35 100 100 70 200 200 140 1.0 25 5.0 100 15 -55 to +150 -65 to +175 400 400 280 600 600 420 V V V A V A nS μA PF °C °C 0.875 1.75 Note 1: Reverse recovery time test Condition, IF=0.5A , I R=1.0A , I RR=0.25A 1.25 25 V R=VRR TJ=125°C TYP. Diode junction capacitance (f=1MHz and applied 4V DC reverse voltage) |